IGBT and Thyristor Market: Global Industry Analysis and Opportunity Assessment 2019-2022

BusinessIndustryReports have new report on “Global IGBT and Thyristor Market 2019-2022”. The report provides the newest industry data and industry future trends. The industry report lists the leading competitors and provides the insights strategic industry Analysis of the key factors influencing the market.

This Report covers the Major Players data, including: shipment, revenue, gross profit, interview record, business distribution etc., these data help the consumer know about the competitors’ better. This report also covers all the regions and countries of the world, which shows a regional development status, including market size.

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The insulated gate bipolar transistor (IGBT) & thyristor provide the advantage over metal-oxide-semiconductor field effect transistor (MOSFET) for minimum switching time and switching losses. In addition, it also provides the advantage over elevated breakdown voltage and less conduction losses of the bipolar junction transistor (BJT) in order to meet current power need. FACTS systems and HVDC use power electronic converters for power conversion and control power quality. Earlier, IGBTs and thyristors were used as key components in HVDC and FACTS converters for many years and now have been developed for higher power use.

On the basis of application, Power is expected to be the key segment for market growth over the forecast period. FACTS application is used for various functions such as voltage stabilization, maintain power flow control & stability, frequency stabilization and congestion management etc. Other applications consist of renewable energy, transportation, motor controls, light dimmer, liquid level regulator, pressure control system and EV/HEV etc. Asia Pacific is expected to grow at a considerable rate owing to high spending in the power sector.

An increasing growth in offshore wind farms are also expected to favor market growth for the forecast period. Additionally, increasing government initiatives for HDVC installations is further expected to fuel the market demand over the next six years. Lack of technology awareness and high investments is expected to act as a restraint to overall market growth. De-carbonization of power systems may provide new opportunities for market growth.

Key Players:

1 Fuji Electric


3 Infineon Technologies

4 Fairchild Semiconductor International

5 Hitachi

6 Mitsubishi Electric and more…..

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The report covers the Segments and sub-segments of the Global IGBT and Thyristor Market by:


1 North America Country (United States, Canada)

2 South America

3 Asia Country (China, Japan, India, Korea)

4 Europe Country (Germany, UK, France, Italy)

5 Other Country (Middle East, Africa, GCC)

Product Types:

1 High Power

2 Medium Power

3 Low Power

Industry Segmentation:

1 Flexible AC Transmission System (FACTS)


Key questions answered in the report include:

1 What are the key factors driving the IGBT and Thyristor market?

2 What are the key market trends impacting the growth of the global IGBT and Thyristor market?

3 What are the challenges to IGBT and Thyristor market growth?

4 Who are the key vendors in the global IGBT and Thyristor market?

5 What are the market opportunities and threats faced by the vendors in the global IGBT and Thyristor market?

6 What are the key outcomes of the five forces analysis of the global IGBT and Thyristor market?

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Table of Content:

1 IGBT and Thyristor Product Definition

2 Global IGBT and Thyristor Manufacturer Share and Market Overview

3 Manufacturer IGBT and Thyristor Business Introduction

4 Global IGBT and Thyristor Market Segmentation (Region Level)

5 Global IGBT and Thyristor Market Segmentation (Product Type Level)

6 Global IGBT and Thyristor Market Segmentation (Industry Level)

7 Global IGBT and Thyristor Market Segmentation (Channel Level)

8 IGBT and Thyristor Market Forecast 2019-2022

9 IGBT and Thyristor Segmentation Product Type

10 IGBT and Thyristor Segmentation Industry

11 IGBT and Thyristor Cost of Production Analysis

12 Conclusion

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